SESHA 2013 Symposium Abstract

Review of III-V on Si Processing Hazards

Trammell, Steven; Davis, Brett

For the 10-7 nm technology node, strained silicon is expected to reach low power performance limits, require alternative channel materials. Applications, such as mobile phones and satellites, will require devices which have higher electron mobility allowing functionality at higher frequencies. III-V on Si is an emerging processing technology, which may provide one solution as we approach these functional and material limits. The III-V processes will introduce processes which are new to traditional silicon semiconductor factories, along with a new set of potential ESH hazards. This presentation will provide an overview of the chemical and material hazards associated with III-V on Si processing, and some of the work ISMI is doing to identify, characterize and control these hazards.